Cambridge GaN Devices announces breakthrough 100 kW+ technology
Thu, Apr 24, 2025
Parallel combination of ICeGaN HEMT and IGBT delivers high efficiency at reduced cost
Cambridge, UK - Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics simpler to design and implement, today revealed more details about a solution that will enable the company to address EV powertrain applications over 100kW – a market worth over $10B - with its ICeGaN® gallium nitride (GaN) technology. Combo ICeGaN® combines smart ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) in the same module or IPM, maximizing efficiency and offering a cost-effective alternative to expensive silicon carbide (SiC) solutions.
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